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MOSFET
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N+P MOS

产品性能：耐压30-100V, 内阻5-150mΩ
优势特点：Trench工艺，具有内阻低，损耗小等特点。
应用领域：无线充/无线充电宝/直流马达风扇

产品选型

Part No. Channel Configuration VDS (V) VGS (V) Vth (V) RDS(ON) (mΩ) Typ. at VGS=10V RDS(ON) (mΩ) Typ. at VGS=4.5V ID (A) Tc=25℃ EAS (mJ) Ciss (pF) Qg (nC) Package
Part No. PDF Channel Configuration VDS (V) VGS (V) Vth (V) RDS(ON) (mΩ) Typ. at VGS=10V RDS(ON) (mΩ) Typ. at VGS=4.5V ID (A) Tc=25℃ EAS (mJ) Ciss (pF) Qg (nC) Package
ASDM4606S N+P Complementary 30V/-30V ±20 +2.5/-2.5 22/43 30/56 8A/-6A 480/648 5.2/14 SOP-8
ASDM30C25E N+P Complementary 30/-30 ±20 1.3-2.4/-1.3_-2.4 15/24 23/40 25/-24 15/33 455/865 11.3/19 PDFN3*3-8
ASDM30C25JQ N+P Complementary 30/-30 ±20 1.0-2.5/-1.0_-2.5 24/55 40/85 25/-25 26.6/110 416/930 5/9.8 TO252-4
ASDM4614S N+P Complementary 40/-40 ±20 1.0-2.5/-1.0_-2.5 16/32 17.3/41 9/-7 N 850/980 5.2/14 SOP-8
ASDM40C15Q N+P Complementary 40/-40 ±20 1.0-2.5/-1.0_-2.5 8.0/15 12/21 41/-22 100/150 1950/2160 48/58 PDFN5*6-8
ASDM40C15S N+P Complementary 40/-40 ±20 1.0-2.5/-1.0_-2.5 7.7/14.8 9.8/18.4 10.9/-7.6 10/15 1980/1938 48/58 SOP-8
ASDM40C23JQ N+P Complementary 40/-40 ±20 1.0-2.5/-1.0_-2.5 18/31 21/41 21/-20 32/38 891/1080 11/17 TO252-4
ASDM4976S N+P Complementary 60/-60 ±20 1.0-2.5/-1.0_-2.5 25/64 32/82 6/-6 N 1040/988 5.2/14 SOP-8
ASDM4976Q N+P Complementary 60/-60 ±20 1.0-2.5/-1.0_-2.5 27/63 32/79 9/-9 N 1031/946 5.2/14 PDFN5*6-8
ASDM60C23JQ N+P Complementary 60/-60 ±20 1.0-2.5/-1.0_-2.5 22/61 27/80 23/-18 25.5/35.3 1039/944 12.56/9.86 TO252-4
ASDM4100S N+P Complementary 100/-100 ±20 1.0-2.5/-1.0_-2.5 98/122 104/125 4/-3 N 723/1774 6.2/13 SOP-8
ASDM100C12AQ N+P Complementary 100/-100 ±20 1.0-2.5/-1.0_-2.50 88/97 100/190 10/-10 10/21 730/1623 16/38 PDFN5*6-8

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